Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice

نویسندگان

چکیده

We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy a GaSb substrate. At room temperature, the device exhibits 50% cut-off of 1.74 µm. revealed to have an electron-dominated avalanching mechanism with gain value 48 at temperature. electron hole coefficients were calculated compared give better prospect performance device. Low excess noise, as characterized carrier ratio ~0.07, has been achieved.

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ژورنال

عنوان ژورنال: Photonics

سال: 2021

ISSN: ['2304-6732']

DOI: https://doi.org/10.3390/photonics8050148